Abstract
A surface-emitting AlGaAs diode laser with an. extremely narrow far field pattern (0.25° X 8°) and dynamic-wavelength stability has been demonstrated. Room temperature surface emission is achieved using a C3P-LQC diode laser with a second order distributed Bragg reflector located on the LOG layer which acts as a waveguide and is exposed outside the active laser region.
© 1986 Optical Society of America
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