Abstract

A common problem in the fabrication of low threshold buried heterostructure lasers in the InGaAsP/InP material system is the control of leakage current [1], Leakage currents lead to increased threshold current and low differential quantum efficiencies. Typically, the current is designed to be confined to the active stripe by reverse-biased p-n junctions. However, in devices using these blocking junctions, charging and discharging of the junction capacitance limits the frequency response of these devices. This problem can be eliminated by using a high resistivity material as the current blocking layer [2].

© 1986 Optical Society of America