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Conferences > CLEO > 1986 > TUQ > TUQ2

0.67-μm GaInAsP/AIGaAs planar-buried-heterostructure lasers grown on GaAs substrates by LPE

Katsumi Kishino, Akinori Harada, Yawara Kaneko, and Shiro Yamamoto

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Abstract

Visible semiconductor lasers in the 0.6-μm wavelength region are quite attractive for wide-range applications developing in optical information processing and optical communications through plastic fibers. Recently, room-temperature cw operations of GaInAsP/GaAsP and AIGalnP/GaAs lasers at 0.66–0.68 μm were achieved. However, complicated epitaxial techniques of hydrid VPE and MOCVD were utilized for their fabrication.1–4

© 1986 Optical Society of America

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