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Laser doping applied to device fabrication in silicon

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Abstract

A doping system employing a XeCI excimer laser has been used to fabricate ultrashallow high-concentration p+n and n+p junctions in silicon. A twofold driving force is associated with this work, namely, (1) it is very difficult to fabricate shallow p+n junctions using conventional ion implantation, and (2) a complete in situ laser-based process must perform doping as well as photolithography, etching, and deposition. At this stage of a more general effort, we report on the electrical characteristics of p+n diodes and NMOS transistors successfully fabricated using the laser system for doping in an otherwise conventional process.

© 1986 Optical Society of America

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