Abstract
A doping system employing a XeCI excimer laser has been used to fabricate ultrashallow high-concentration p+n and n+p junctions in silicon. A twofold driving force is associated with this work, namely, (1) it is very difficult to fabricate shallow p+n junctions using conventional ion implantation, and (2) a complete in situ laser-based process must perform doping as well as photolithography, etching, and deposition. At this stage of a more general effort, we report on the electrical characteristics of p+n diodes and NMOS transistors successfully fabricated using the laser system for doping in an otherwise conventional process.
© 1986 Optical Society of America
PDF ArticleMore Like This
K. Omori, T. Seino, Y. Yamaguchi, N. Kobayashi, T. J. Kudo, and K. Sano
JTh2A.43 CLEO: Applications and Technology (CLEO:A&T) 2012
K. B. Nguyen, G. F. Cardinale, D. A. Tichenor, G. D. Kubiak, K. Berger, A. K. Ray-Chaudhuri, Y. Perras, S. J. Haney, R. Nissen, K. Krenz, R. H. Stulen, H. Fujioka, C. Hu, J. Bokor, D. M. Tennant, and L. A. Fetter
A208 Extreme Ultraviolet Lithography (EUL) 1996
David N. Payne, L. Reekie, R. J. Mears, S. B. Poole, I. M. Jauncey, and J. T. Lin
FN1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986