Laser-induced high-aspect etching of InP: experiment and theory

Alan Eli Willner; D. V. Podlesnik; H. H. Gilgen; R. M. Osgood

doi:10.1364/CLEO.1986.TUK8

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1986),
paper TUK8
•https://doi.org/10.1364/CLEO.1986.TUK8

Laser-induced high-aspect etching of InP: experiment and theory

Alan Eli Willner, D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood

Conference on Lasers and Electro-Optics 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-09-2

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Poster Session: 1 (TUK)

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A. E. Willner, D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood, "Laser-induced high-aspect etching of InP: experiment and theory," in Conference on Lasers and Electro-Optics, G. Bjorklund, E. Hinkley, P. Moulton, and D. Pinnow, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper TUK8.

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Abstract

New semiconductor etching techniques for InP and InP-based alloys can lead to novel electrooptical components, such as through-wafer waveguides, controllable profile deep gratings, and optical fiber interconnects. These can be important in long-distance communication systems.¹

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