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Conferences > CLEO > 1986 > THK > THK29

Visible Ga1−xAlxAs semiconductor lasers with large optical cavity

Guo-Ying Chen, Xing-De Zhang, Tie-Min Chen, and Wen-Jie Liu

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Abstract

In recent years, the many papers about double-heterostructure visible semiconductor lasers (e.g., Refs. 1–4) are mostly about single-dopant (Si or Mg) or nondopant lasers. The starting growth tern-perature was 860°C and cooling rate was 0.5°C/min. Large optical cavity (LOG) visible semiconductor lasers with a single-dopant or nondopant have been studied, especially the double-dopant.

© 1986 Optical Society of America

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