Abstract
The intermixing of Al and Ga at temperatures as low as 500°G was first demonstrated by Laidig et al. using diffusion of Zn into thin GaAs-AIAs superlattices.1 The low temperature demonstrated in this work is contrasted sharply with the high temperatures (800–1000°C) necessary for Ga-Ai interdiffusion by ordinary thermal annealing.2-6 Disordering of multilayered structures by Zn diffusion has also been observed with GaAs-AIGaAs,5-7 GaP-GaAsP,8 GaAs-lnGaAs,9 and InGaAs-lnA-lAs.10 In addition to Zn, by the amphoteric dop-ants Si11,12 and Ge12, the donor S13, the impurity atoms F14 and Cu15, and the constituent atoms As14 have all been reported to produce disordering when diffused through multilayers of GaAs/AI-GaAs. Ion implantation of a wide variety of atomic species, such as Si;16–19 Zn,17,18 S,18 Cu,15 Al,18 As,14,20 Ga,21 F,14 and an inert ion Kr,18 followed by heat treatment has also been successful in smearing out quantum well(s). Impurity-induced disordering can also be achieved by proper doping of the multilayer structures during growth. Enhanced interdiffusion has been studied extensively using Si22–25 doping in the layers.
© 1986 Optical Society of America
PDF ArticleMore Like This
R. L. Thomton, R. D. Bumham, N. Holonyak, J. E. Epler, and T. L. Paoli
WB1 Semiconductor Lasers (ASLA) 1987
R. L. Thornton, Robert D. Burnham, and Thomas L. Paoli
TUQ4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986
N P Johnson, A S Helmy, A C Bryce, and J H Marsh
CThK6 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998