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Time-resolved photoluminescence of dense electron–hole plasmas in InGaAsP films

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Abstract

The study of carrier dynamics in InGaAsP alloys is important for the design of the optoelectronic devices which are relevant to optical communication technology. The design of semiconductor lasers which operate at 1.3 or 1.55 μm, where optical fibers have minimum loss and dispersion, necessitates understanding the dynamics of carrier re-combination at high densities as a function of material composition. In particular, understanding the relative importance of loss mechanisms which compete with radiative recombination is crucial.

© 1985 Optical Society of America

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