Abstract
An ArF excimer laser has been used to deposit films of titanium silicide from gas mixtures of TiCl4 and SiH4. The film deposition is initiated by dissociation of TiCl4. The irradiated volume, containing typically 10 mTorr of TiCl4 and 20 mTorr of SiH4, is converted to titanium silicide film with nearly unit quantum efficiency. Mass spectrometry analysis of the gas mixture during chemical vapor deposition indicates that HCl and H2 are the major gas phase products produced by the photolysis.
© 1985 Optical Society of America
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