Abstract
X-ray lithography is widely expected to supplant optical lithography for submicron VLSI circuit production. Currently available x-ray aligners employ electron-impact sources for full wafer exposures. The first x-ray step-and-repeat subfield exposure systems will also use x-ray tubes. However, high throughput (>40 wafer levels/h) of 150-mm wafers coated with process-compatible resists will require brighter x-ray sources for short (few second) exposure times. Both high-temperature plasma sources of kilovolt radiation and compact storage ring sources of synchrotron x radiation are being developed for lithography. This paper reviews progress toward such second-generation x-ray lithography sources with emphasis on laser-heated plasmas.
© 1985 Optical Society of America
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