Impact ionization rates for electrons and holes in Hg0.27Cd0.73Te avalanche photodiodes for optical fiber transmission systems at λ = 1.3 μm

ROBERT ALABEDRA; BERNARD ORSAL; MATEO VALENZA; GUY PICHARD; JEAN MESLAGE

doi:10.1364/CLEO.1985.FA1

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1985),
paper FA1
•https://doi.org/10.1364/CLEO.1985.FA1

Impact ionization rates for electrons and holes in Hg_0.27Cd_0.73Te avalanche photodiodes for optical fiber transmission systems at λ = 1.3 μm

ROBERT ALABEDRA, BERNARD ORSAL, MATEO VALENZA, GUY PICHARD, and JEAN MESLAGE

Conference on Lasers and Electro-Optics 1985

Baltimore, Maryland United States
21–24 May 1985
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Detectors and Passive Components (FA)

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R. ALABEDRA, B. ORSAL, M. VALENZA, G. PICHARD, and J. MESLAGE, "Impact ionization rates for electrons and holes in Hg0.27Cd0.73Te avalanche photodiodes for optical fiber transmission systems at λ = 1.3 μm," in Conference on Lasers and Electro-Optics, A. Gara, C. Giuliano, D. Auston, and R. Jacobs, eds., OSA Technical Digest (Optica Publishing Group, 1985), paper FA1.

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Abstract

The purpose of this paper is the characterization of Hg_0.3Cd_0.7Te avalanche photodiodes at λ = 1.3 μm. The devices are manufactured for optical transmission systems by SAT. This cadmium-rich alloy range has been chosen because of the very large spin-orbit coupling exhibited by these materials. The values of the ratio k = β/α, which are very important for multiplication noise performance, are ~10, β being the hole ionization coefficient and α the electron ionization coefficient.₁

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