Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Planar GaAs PIN photodiode with picosecond time response

Not Accessible

Your library or personal account may give you access

Abstract

The development of optical signal processing and optical communication systems has created the need for ultrafast photodetectors to achieve high data rates. Very fast response times have been achieved with GaAs Schottky photodiodes.1 Here we report the development and characterization of a high speed planar GaAs PIN photodiode which exhibits an impulse response of 19-psec FWHM to 4-psec pulses from a near-IR laser. Because of its design characteristics, the photodiode is ideally suited for fiber-optic coupling of the light directly into the intrinsic layer. Since the device has planar contacts it can easily be integrated in optoelectronic circuits.

© 1984 Optical Society of America

PDF Article
More Like This
High-speed GaAs PIN photodiodes grown on Si substrates by molecular beam epitaxy

J. PASLASKI, H. Z. CHEN, H. MORKOC, and AMNON YARIV
THX2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988

High Speed InGaAs PIN Photodiode Grown on Semi-Insulating InP Substrate Suitable for Monolithic Integration

Kenneth Li, Edward A. Rezek, and H. David Law
ThA3 Integrated and Guided Wave Optics (IGWO) 1984

Hybrid Integration of an InGaAs/InP PIN Photodiode with an Ultrafast Sampling Circuit

Y.G. Wey, M. Kamegawa, A. Mar, K. J. Williams, K. Giboney, D. L. Crawford, J. E. Bowers, and M. J. Rodwell
PD12 Optical Fiber Communication Conference (OFC) 1991

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.