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Conferences > CLEO > 1984 > THD > THD5

Semiconductor surface structure probing by second-harmonic and sum frequency generation in reflection

S. A. Akhmanov, M. F. Galjautdinov, N. I. Koroteev, G. A. Paitian, I. L. Shumay, and A. A. Sumbatov

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Abstract

In a recent paper2 we presented the experimental results on the time dependence of the second harmonic generation (SHG) of the mode-locked Q- switched Nd:YAG laser in reflection from both amorphous and crystalline GaAs surfaces during the pulsed laser annealing under ruby laser irradiation. The dynamics of the rapid increase of SHG intensity due to recrystallization of a noncentrosymmetric GaAs lattice was interpreted in terms of the melting model of laser annealing.3 It was claimed in the same paper2 that SHG in reflection4 is a powerful tool to control both the dynamics and quality of lattice recrystallization during pulsed-laser annealing.

© 1984 Optical Society of America

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