We have studied the effects of 1-μm radiation on the surface morphology of crystalline silicon using pulses that are 7 and 48 psec in duration. Contrary to suggestions in the literature and in contrast to observation with longer pulse widths, we consistently observe a crystal-to-amorphous (c–a) transition using the 7-psec pulses as well as periodic ripple formation and ring structure on the surface. Also we have measured a significant pulse-width dependence to the single-shot melting threshold.

© 1984 Optical Society of America

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