Abstract

The discovery of band-gap resonant giant nonlinear refraction in the semiconductor InSb at 77 K has led to the demonstration of a number of devices based upon the combination of this nonlinearity with positive or negative optical feedback. For the InSb system a further important characteristic is that the absorption level, 5-50 cm−1, is sufficiently small that in a device of typical thickness (100-μm) heating effects are small and cw operation is possible.

© 1984 Optical Society of America

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