Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1983 > WG > WG4

Quaternary InGaAsP buried crescent lasers with separate optical confinement

J. P. Van Der Ziel, H. Temkin, and R. A. Logan

Not Accessible

Your library or personal account may give you access

Abstract

We report a significant improvement in the performance of InGaAsp (λ = 1.3-1.5-μm) orescent lasers1 grown in an etched V-groove by the addition of InGaAsP (λ =1.1-1.3μm) optical confining layers on both sides of the active layer.2,3 With the large optical cavity, (a) higher optical power, (b) improved optical linearity, (c) higher external quantum efficiency, (d) improved beam quality, and (e) high device yield are obtained.

© 1983 Optical Society of America

PDF Article
More Like This
High speed 1.3µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer

W. H. Cheng, C. B. Su, K. D. Buehring, C. P. Chien, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, and S. W. Zehr
TuD3 Semiconductor Lasers (ASLA) 1987

Three Channels Buried Crescent InGaAsP Laser with 1.51 μm Wavelength on Semi-insulating InP

U. Koren, S. Arai, and P. K. Tien
TuC3 Integrated and Guided Wave Optics (IGWO) 1984

1.2-μm InGaAsP p-substrate buried crescent laser diodes for wavelength division multiplexing fiber-optic systems

Y. SAKAKIBARA, H. HIGUCHI, E. OOMURA, Y. NAKAJIMA, Y. YAMAMOTO, K. GOTO, A. TAKEMOTO, H. NAMIZAKI, and W. SUSAKI
TuJ6 Optical Fiber Communication Conference (OFC) 1986

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use