Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Laser-formed oxide layers on silicon

Not Accessible

Your library or personal account may give you access

Abstract

A low-substrate temperature process for forming oxides on silicon has been demonstrated. A liquid organosilicate produced by Allied Chemical is spun on the wafer and subsequently irradiated with UV or visible laser light. The process has been applied to forming large-area oxides as required for passivation layers and to fine-line structures, which relies on a direct write technique.

© 1983 Optical Society of America

PDF Article
More Like This
Argon laser oxidation of silicon: the importance of enhanced carrier density effects

Ian W. Boyd
TUF5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1983

Microstructure on Titanium Oxide and Silicon Nitride formed by KrF Excimer Laser Ablation

Tomoyuki Shimoda, Kosuke Takahashi, and Minoru Obara
MB1_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001

Low-temperature photooxidation of silicon monoxide to silicon dioxide with far-UV (193-nm) laser radiation

S. E. Blum, K. H. Brown, and R. Srinivasan
FF2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1983

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.