Abstract

Hgi_1−xCri_xTe is a compound semiconductor whose band gap can be varied between 0 and 1.4 eV by selecting the appropriate Cd fraction x in the alloy. This compound semiconductor stows strong nonlinear effects owing to the resonant enhancement of signal when the pump wavelength is matched to the band gap. Previously we have reported degenerate four-wave mixing resulting from conduction band nonparabolicity,¹ spin flip,² and interband carrier excitation.³

© 1983 Optical Society of America