Abstract
The advantages of using pulsed excimer lasers for semiconductor processing have been demonstrated recently.1,2 It has been shown that, regardless of the large differences in the optical properties of Si at the wavelengths of XeCl lasers (308 nm) and ruby (694 nm) or frequency-doubled Nd:YAG (530-nm) lasers, the quality of annealing, assessed in terms of damage removal in the implanted layer, dopant profile behavior, and junction properties, is very similar. However, because of the good optical quality of the beam and perhaps because of the trapezoidal (rather than Gaussian) temporal shape of the excimer laser pulses, excellent annealing can be obtained without the use of beam homogenizers and substrate heating.2
© 1983 Optical Society of America
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