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Pulsed and cw laser annealing of polysilicon films

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Abstract

Polysilicon structures are commonly used in integrated circuits as load resistors and interconnects. In this paper the sheet resistances, microstructures, and thermal stability of films annealed with a cw Ar laser or a pulsed ruby or pulsed Nd:YAG laser are compared. Low-pressure CVD polysilicon films (~6800 Å) were deposited onto silicon nitride layers on silicon substrates. The films were implanted with 75As or 31P or diffused-doped (950°C) with phosphorus. The samples were then annealed with one of the three lasers.

© 1981 Optical Society of America

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