Abstract

Ultrafast optoelectronic switching under low bias has been reported earlier in CdS_0.5Se_0.5.¹ It has been observed that the lifetime of the photoexcited carriers depends on the frequency and the intensity of the incident radiation.² It was also observed that the CdS_0.5Se_0.5 optoelectronic switch can turn off automatically when excited by intense 0.53-µm radiation within a few tens of nanoseconds.³ Now we report the scaling of ultrafast optoelectronic switching in CdS_0.5Se_0.5 under pulsed bias up to 15 kV and under de bias up to 2 kV.

© 1981 Optical Society of America