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Conferences > CLEO > 1981 > THH > THH2

Laser-induced oxidation via oxygen-trapping in UV laser-induced amorphous silicon

Y. S. Liu, S. W. Chiang, and F. Bacon

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Abstract

Rapid Oxidation of the amorphous silicon layer induced by pulsed UV laser irradiation is reported. The oxide of ~400 Å was produced when a silicon sample was irradiated by intense UV laser pulses in an air or an oxygen ambient. (The oxide thickness shall be compared with the native oxide thickness of ~10 Å for an unirradiated sample.) The formation of oxide is attributed to adsorption of oxygen during the period of surface melting. Rapid oxidation takes place via the trapping of adsorbed oxygen during the melting and resolidification in the regrown zone.

© 1981 Optical Society of America

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