Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm

I. P. Kaminow; L. W. Stultz; R. E. Nahory; J. C. Dewinter

doi:10.1364/CLEO.1981.FA2

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1981),
paper FA2
•https://doi.org/10.1364/CLEO.1981.FA2

Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm

I. P. Kaminow, L. W. Stultz, R. E. Nahory, and J. C. Dewinter

Conference on Lasers and Electro-Optics 1981

Washington, D.C. United States
10–12 June 1981
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Semiconductor Injection Lasers: 1 (FA)

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I. P. Kaminow, L. W. Stultz, R. E. Nahory, and J. C. Dewinter, "Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm," in Conference on Lasers and Electro-Optics, F. Abbott, J. Ready, T. Li, and G. Sincerbox, eds., OSA Technical Digest (Optica Publishing Group, 1981), paper FA2.

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Abstract

The room temperature cw operation of an InGaAsP ridge waveguide laser at λ = 1.55 μm was reported earlier.¹ Since then many wafers have been studied employing modifications In the processing in an effort to improve the performance and understand the limitations of the ridge guide laser. For the most part, these lasers have operated at 1.3μm.

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