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Sensitivity enhancement for total internal reflection fluorescence imaging using dielectric thin films

Kyujung Kim, Eun-Jin Cho, Yong-Min Huh, and Donghyun Kim

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Abstract

The evanescent field enhancement was investigated experimentally based on dielectric thin films in total internal reflection microscopy. The sample employed Al2O3 and SiO2 layers deposited on an SF10 glass substrate. Field intensity enhancement measured by fluorescent microbeads relative to that of a control sample without dielectric films was polarization dependent and was in good agreement with numerical results. The thin-film-based sensitivity enhancement was also qualitatively confirmed in live-cell imaging of quantum dots.

© 2008 Optical Society of America

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