Abstract
Highly efficient GaSb based semiconductor disk lasers operating in the 1.9 2.8 µm range have been realized. They reach output powers up to 10 W in CW operation with a high beam quality. By using wavelength selective intracavity elements, tunable single frequency emission was achieved with a heterodyne linewidth below 100 kHz (< 1.3 fm) at 1 W CW output power.
© 2012 Optical Society of America
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