Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Yb:SFAP crystal, Intracavity and indirectly diode-pumped at 914 nm, For a cw laser emission at 985 nm

Not Accessible

Your library or personal account may give you access

Abstract

We present the first experiment of intracavity pumping at 914 nm of an Yb:S-FAP crystal emitting at 985 nm on the three-level-laser transition. We obtained 250 mW output power at 985 nm for 9.7 W incident pump power at 808 nm.

© 2008 Optical Society of America

PDF Article
More Like This
First indirectly diode pumped Yb:SFAP laser, Reaching the watt level at 985 nm

Marc Castaing, François Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers, and John Tassano
CThFF6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

Efficient laser operation of an Yb: S-FAP crystal at 985 nm

Sylvie Yiou, François Balembois, Patrick Georges, and Kathleen Schaffers
438 Advanced Solid-State Photonics (ASSL) 2003

Efficient three-level continuous-wave laser operation of an Yb:S-FAP crystal at 985 nm

Sylvie Yiou, Gaêlle Lucas-Leclin, François Balembois, Patrick Georges, and Kathleen Schaffers
CThM43 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved