Self Raman conversion in YVO4:Nd microchip laser

Alexandre A. Demidovich; Ludmila E. Batay; Alexander S. Grabtchikov; Victor A. Lisinetskii; Valentin A. Orlovich; Andrey N. Kuzmin

doi:10.1364/ASSP.2004.TuB9

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Advanced Solid-State Photonics 2004

Santa Fe, New Mexico United States
1–4 February 2004
ISBN: 1-55752-764-4

From the session
Poster Session 2 (TuB)

Self Raman conversion in YVO4:Nd microchip laser

Alexandre A. Demidovich, Ludmila E. Batay, Alexander S. Grabtchikov, Victor A. Lisinetskii, Valentin A. Orlovich, and Andrey N. Kuzmin

Advanced Solid-State Photonics
OSA Technical Digest (Optical Society of America, 2004),
paper TuB9
•https://doi.org/10.1364/ASSP.2004.TuB9

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A. A. Demidovich, L. E. Batay, A. S. Grabtchikov, V. A. Lisinetskii, V. A. Orlovich, and A. N. Kuzmin, "Self Raman conversion in YVO4:Nd microchip laser," in Advanced Solid-State Photonics, OSA Technical Digest (Optical Society of America, 2004), paper TuB9.

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Abstract

The sub-nanosecond passively Q-switched Nd:YVO4 / Cr4+:YAG microchip laser with self Raman conversion has been investigated. The pulse duration obtained at the Raman wavelength (1.18 µm) was as short as 830 ps.

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Abstract

Advanced Solid-State Photonics 2004

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