Abstract
Femtosecond-laser-induced periodic nanostructures are formed by superimposed laser pulses. Some formation mechanisms have been proposed, however the detailed mechanism, especially dynamics, are still not clear. In this study, we investigated the effect of pulse interval and number of pulses on the LIPSS formation onto GaAs an Si substrates. Laser pulses with shorter interval of 10μs(100kHz) formed LIPSS at smaller number of laser pulses compared with the longer interval of 0.42s(2.4Hz). And period of the LIPSS shortened with increasing the pulse number.
© 2020 The Author(s)
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