Abstract

Interwell carrier transport, important for efficient LED and laser diode operation, was studied in InGaN multiple quantum wells by time-resolved photoluminescence. A strong increase in transport efficiency was achieved in structures in which GaN barriers were replaced with that of InGaN.

© 2019 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription