Diode Pumped Room Temperature Mid-Infrared Erbium Laser

S. R. Bowman; S. K. Searles; N. W. Jenkins; S. B. Qadri; E. F. Skelton; Joseph Ganem

doi:10.1364/ASSL.2001.MC1

Advanced Solid-State Lasers
OSA Trends in Optics and Photonics (Optica Publishing Group, 2001),
paper MC1
•https://doi.org/10.1364/ASSL.2001.MC1

Diode Pumped Room Temperature Mid-Infrared Erbium Laser

S. R. Bowman, S. K. Searles, N. W. Jenkins, S. B. Qadri, E. F. Skelton, and Joseph Ganem

Advanced Solid State Lasers 2001

Seattle, Washington United States
ISBN: 1-55752-661-3

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S. R. Bowman, S. K. Searles, N. W. Jenkins, S. B. Qadri, E. F. Skelton, and J. Ganem, "Diode Pumped Room Temperature Mid-Infrared Erbium Laser," in Advanced Solid-State Lasers, C. Marshall, ed., Vol. 50 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2001), paper MC1.

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Abstract

We report first operation of a 4.6 µm laser for trivalent erbium. Efficient, broadband, room temperature operation was obtained pumping with a 0.80 µm laser diode.

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