Up to 5.0 at.% Nd3+ doped Bi4Si3O12 single crystals were realized by the Bridgman method. The spectroscopic parameters were evaluated and found that Nd3+:Bi4Si3O12 has a large quenching parameter (3.6 at.%) and very wide bandwidth in both transition of emission (23.1 nm) and absorption (16.1 nm). These properties are suitable for diode- pumped solid state lasers.

© 2001 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription