Abstract

Up to 5.0 at.% Nd3+ doped Bi4Si3O12 single crystals were realized by the Bridgman method. The spectroscopic parameters were evaluated and found that Nd3+:Bi4Si3O12 has a large quenching parameter (3.6 at.%) and very wide bandwidth in both transition of emission (23.1 nm) and absorption (16.1 nm). These properties are suitable for diode- pumped solid state lasers.

© 2001 Optical Society of America

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