Abstract
The laser-induced damage threshold in β -BaB2O4 grown by Czochralski method ( CZ-BBO ) is improved by annealing at 920 °C to reduce the intensity of scattered light in the crystal. Experiments indicate that the reduction is generated as a result of dipole radiation vibrated along the z-axis. The threshold in 266 nm of annealed CZ-BBO is improved to 3.4 GW/cm2, which is 1.70 times higher than that of as-grown CZ-BBO and 1.13 times higher than that of as-grown Flux-BBO.
© 1998 Optical Society of America
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