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Conferences > ASSL > 1997 > QS > QS5

Passively Q-switched microchip laser at 1.3 and 1.5 μm using semiconductor saturable absorber mirrors

R. Fluck, B. Braun, U. Keller, E. Gini, and H. Melchior

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Abstract

We demonstrate a passively Q-switched diode-pumped 1.34 μm Nd:YV04 microchip laser. We achieved single-frequency, 230 ps pulses using a semiconductor saturable absorber mirror (SESAM). The pulse width and the repetition rate can be varied from 230 ps to 12 ns and 30 kHz to 4 MHz respectively, by changing the design parameters of the saturable absorber, the thickness of the crystal and the pump power. We also present preliminary results of passive Q-switching at 1.53 μm in an Er/Yb:Glass microchip system.

© 1997 Optical Society of America

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