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Spectroscopic Investigations of the NIR Center in Cr Doped Y2SiO5

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Abstract

We report spectroscopic studies on the near infrared (NIR) center in Cr doped Y2SiO5. A tunable narrow band laser operating in the region of 1100nm to 1200nm was used to perform NIR excitation. Two electronic origins at 1148.2nm (8709cm−1) and 1143.6nm (8744cm−1) matching up in excitation and emission can be identified. Piezo-spectroscopic experiments are used to explore the sensitivity of these electronic origins to uniaxial stress.

© 1993 Optical Society of America

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