Abstract

Titanium doped sapphire (Al2O3:Ti3+) is now recognized as one of the most attractive candidate for efficient and broadly tunable solid state laser operation between about 650 and 1050 nm*. Most of the crystals used for this application are usually grown by the Czokralski (CZ) or the heat exchanger method (HEM). In this communication, report is made on equivalent performance of Verneuil grown Al2O3:Ti3+ single crystals.

© 1987 Optical Society of America

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References

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