Abstract

Recent progress is described on work carried out at MIT Lincoln Laboratory in the area of tunable solid state and semiconductor lasers. Included are external cavity controlled ultrastable GaAlAs diode lasers and the limiting factors contributing to the ultimate stability and linewidth of these devices, high power pulsed external cavity diode lasers, Ti:sapphire lasers and laser materials, and the optical properties of nonlinear materials used for harmonic generation such as KNbO3, KTP, and LiIO3.

© 1987 Optical Society of America

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