Abstract

Sapphire is a very promising host material for Ti3+ for tunable laser application. It is isostructural to Ti2O3 with a trigonal distorted octahedral lattice site for the dopant. The strong crystal field of Al2O3 yields in a wide level splitting, The band gap of about 10eV prevents reabsorption, excited state absorption or energy transfer effects. Similarly, Ti3+ has besides its splitted 2D free ion level no higher energy levels up to about 10eV.

© 1986 Optical Society of America

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