Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > ASLA > 1999 > HHSL > 2

Progress in the Development of Broad-Waveguide High-Power 0.97-2.3 µm Diode Lasers and CW Room Temperature 2.3-2.7 µm Mid-Infrared lasers

D. Z. Garbuzov

Not Accessible

Your library or personal account may give you access

Abstract

Recent investigations [l-6] demonstrate that increase of the waveguide thickness in separate confinement-heterostructure quantum-well (SCH-QW) diode lasers significantly decreases internal losses, leading to record high output powers.

© 1999 Optical Society of America

PDF Article
More Like This
High-power 800–2000-nm-wavelength broad-waveguide SCH-QW diode lasers

D.Z. Garbuzov
CMD2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

2.0 - 2.4 µm High-Power Broaden Waveguide SCH-QW InGaAsSb/AlGaAsSb Diode Lasers

D. Garbuzov, H. Lee, V. Khalfin, R. Martinelli, R. Menna, and J. Connolly
CWL2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998

2.3 - 2.6 µm CW High-Power Room Temperature Broaden Waveguide SCH-QW InGaAsSb/AlGaAsSb Diode Lasers

D. Garbuzov, H. Lee, V. Khalfin, L. DiMarco, R. Martinelli, R. Menna, and J. C. Connolly
CPD16 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use