Electronic structure of different Ga0.5Al0.5As surface from first-principles

Xiaohua Yu; Bengkang Chang; Zhonghao Ge

doi:10.1364/AOEE.2013.ASa3A.17

International Photonics and Optoelectronics Meetings (POEM)
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper ASa3A.17
•https://doi.org/10.1364/AOEE.2013.ASa3A.17

Electronic structure of different Ga_0.5Al_0.5As surface from first-principles

Xiaohua Yu, Bengkang Chang, and Zhonghao Ge

Advanced Optoelectronics for Energy and Environment 2013

Wuhan China
25–26 May 2013
ISBN: 978-1-55752-976-3

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AOEE Poster Session (ASa3A)

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X. Yu, B. Chang, and Z. Ge, "Electronic structure of different Ga0.5Al0.5As surface from first-principles," in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optica Publishing Group, 2013), paper ASa3A.17.

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Abstract

Using first-principles plane-wave pseudopotential method, electronic structure of Ga_0.5Al_0.5As (001), (011) and (111) surfaces are analyzed, result shows that Ga_0.5Al_0.5As (001)β2(2×4) surface owns the best photoemission properties.

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