The Optimal Design of GaAs/GaAlAs asymmetric Coupled Quantum Well for Electro-Optical Switch

Zhi xin Xu

doi:10.1364/AOE.2008.SaK33

Asia Optical Fiber Communication and Optoelectronic Exposition and Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper SaK33
•https://doi.org/10.1364/AOE.2008.SaK33

The Optimal Design of GaAs/GaAlAs asymmetric Coupled Quantum Well for Electro-Optical Switch

Zhi xin Xu

Asia Optical Fiber Communication and Optoelectronic Exposition and Conference 2008

Shanghai China
30 October–2 November 2008
ISBN: 978-1-55752-863-6

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Z. x. Xu, "The Optimal Design of GaAs/GaAlAs asymmetric Coupled Quantum Well for Electro-Optical Switch," in Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper SaK33.

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Abstract

Based on perfect work condition for electro-optical switch, the structure of a GaAs/GaAlAs asymmetric coupled quantum-well is optimized, consequently the optimized coupled quantum well has a large electric field induced refractive index change

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