This presentation gives an overview of recent advances in the 1st- and 2nd generation MEMS FPI processes for near- and mid- infrared (NIR-MIR) wavelength sensing applications for automotive- and process industry. The measured values for the 1st generation NIR MEMS FPI devices for λ = 1.5 – 2.0 µm show FWHM = 15 nm at the optimization wavelength of 1750 nm. The 2nd generation MEMS process for produced devices for NIR λ = 1.9 – 2.5 µm (FWHM = 17nm) and MIR λ = 2.9 – 3.6 µm (FWHM = 22nm). A novel NIR sensor based on the 2nd generation MEMS FPI chips has been realized. The developed sensors are being validated for application in process control. Preliminary results show good signal levels, which allow following the status of esterification process.

© 2017 Optical Society of America

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