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Conferences > ACPC > 2021 > W1F > W1F.2

Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy

Bowen Song, Bei Shi, Si Zhu, Simone Šuran Brunelli, and Jonathan Klamkin

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Abstract

InGaAs photodiodes were realized on Si by heteroepitaxy, demonstrating the dark current density of 0.45 mA/cm2, responsivity of 0.7 A/W, bandwidth of 11.2 GHz and 17 years equivalent room-temperature operation.

© 2021 The Author(s)

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