Abstract

Monolithic III-V materials grown on Si is a promising platform for silicon photonics. Here, by investigating the laser performance of two conventional III-V quantum structures on Si, namely quantum-dots and quantum-well, we unambiguously demonstrate the excellence and suitability of quantum-dots over quantum-well in silicon-based laser structure and reveal the physical mechanisms underneath, which is attributed to the better tolerance characteristic of quantum-dots for optically detrimental defects. Our work shows that monolithic III-V quantum-dot lasers on Si are the most promising light source for silicon photonics technology.

© 2019 The Author(s)

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