High-low-high doping and heterojunction were introduced in the charge layer of AlGaN solar-blind PININ APDs. The simulated results show that the avalanche breakdown voltage can be effectively reduced by the enhanced electric field induced by modulated doping and bandgap.
© 2019 The Author(s)
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription