Abstract

We report on lateral pin and vertical pin germanium (Ge) photodetectors se-lectively grown at the end of silicon waveguides. The responsivities of the two types of devices at 1550 nm were measured, with the corresponding values of 0.616 A/W and 0.215 A/W. Open eye diagrams at 40 Gb/s were demonstrated under -2 V bias at the wavelength of 1550 nm. © 2019 The Author(s)

© 2019 The Author(s)

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