Abstract

We experimentally demonstrate a high bandwidth silicon Mach-Zehnder modulator based on interleaved PN junctions using standard 130nm CMOS platform. A modulation efficiency of 2.4 V·cm is achieved in an MZM with a 1.5 mm-long phase shifter. High small signal electro-optical response of 34 GHz was measured, indicating a data transmission capability of up to 70 Gbps. Eye diagrams for different modulation speed up to 50 Gbps with 5.6 dB extinction ratio was experimentally demonstrated.

© 2018 The Author(s)

PDF Article
More Like This
Mid-infrared (MIR) Mach-Zehnder Silicon Modulator at 2µm Wavelength based on Interleaved PN Junction

Wanjun Wang, Zecen Zhang, Xin Guo, Jin Zhou, Sia Jia Xu Brian, Mohamed S. Rouifed, Chongyang Liu, Callum Littlejohns, Graham T. Reed, and Hong Wang
STh1B.1 CLEO: Science and Innovations (CLEO_SI) 2018

High-Efficiency Silicon Mach-Zehnder Modulator with U-Shaped PN Junctions

Gangqiang Zhou, Linjie Zhou, Yuyao Guo, Lei Liu, Liangjun Lu, and Jianping Chen
JTh2A.42 CLEO: Applications and Technology (CLEO_AT) 2019

Comparison between Lateral and Interleaved Junctions for High-speed O-band Silicon Mach-Zehnder Modulator

Yesica R. R. Bustamante, Giovanni B. de Farias, Diogo A. Motta, Alexandre P. Freitas, Lucas Grabielli, and Hugo E. Hernandez-Figueroa
Th3A.6 Latin America Optics and Photonics Conference (LAOP) 2018

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription