Abstract

We numerically and experimentally demonstrated a compact, low insertion loss TE-pass polarizer based on shallowly-etched silicon-on-insulator ridge optical waveguides with varying widths. The polarizer is fabricated on a 220 nm-thick SOI wafer with standard CMOS technique and then characterized by using a free-space optical system. A high extinction ratio (18.5 dB) has been achieved with the low insertion loss (0.15 dB) for TE mode for a 46 μm long polarizer.

© 2018 The Author(s)