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Conferences > ACPC > 2017 > Su2A > Su2A.116

Micro-Raman scattering and Time Resolved Luminescence of InGaN thin films grown on GaN/sapphire by MOCVD

Chong Chen, Deng Xie, Hailong Wang, Zhi Ren Qiu, Hao Jiang, Jinyu Li, Yuhao Ren, and Hai Zhu

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Abstract

Indium cluster in InGaN epilayers prepared with different H2-treating times was investigated. In cluster with the form of lower atom bonds was evidenced by Raman spectra. Carrier lifetime was found to increase with the H2-treating time.

© 2017 Optical Society of America

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