Abstract
We demonstrate intersubband absorptions and photocurrent response at wavelength of 3–5μm in nitride-based semiconductor step quantum wells. The structures consist of a 1.8nm thick Al0.5Ga0.5N barrier, a 1.8nm thick GaN well and a 16nm thick Al0.25Ga0.75N step barrier. With this approach, one can create a virtually flat band potential energy profile in the step barrier layers, which is confirmed by analysing the temperature dependence dark current results.
© 2014 Optical Society of America
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