Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > ACPC > 2014 > AF1J > AF1J.3

AlGaN/GaN Nanostructures for UV Light Emitting Diodes

J Brault, B Damilano, M Leroux, A Courville, S Chenot, G. Randazzo, P Vennéguès, P DeMierry, J Massies, D Rosales, T Bretagnon, and B Gil

Not Accessible

Your library or personal account may give you access

Abstract

UV LED efficiencies still need improvements and the potentials of (Al,Ga)N-based nanostructures as UV emitters are investigated. The main parameters leading to nanostructures emitting at shorter wavelengths are presented. LED properties are shown and discussed.

© 2014 Optical Society of America

PDF Article
More Like This
III-Nitride Quantum Dot Based Light Emitting Diodes for UV emission

J. Brault, B. Damilano, A. Courville, M. Al Khalfioui, M. Leroux, S. Chenot, P. Vennéguès, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, and B. Gil
25H1_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Impact of the n+-GaN/AlGaN/p+-GaN Tunnel Junction for III-nitride UV Light-emitting Diodes

Luping Li, Yonghui Zhang, and Zi-Hui Zhang
Su1G.1 Asia Communications and Photonics Conference (ACP) 2017

Thermal Stability of Reflection Multilayers on p-AlGaN/GaN contact of deep-UV Light Emitting Diodes

M. Khizar, K. Acharya, and M. Yasin Akhtar Raja
ITuD5 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2007

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use